Ashok N Kamthane Programming With Ansi And Turbo C Pdf


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Ashok N Kamthane Programming With Ansi And Turbo C Pdf

Ashok N Kamthane – Wikipedia, the free encyclopedia. ashok n kamthane, ashok kamthane c programming pdf, ashok n kamthane c programming pdf, ashok kamthane c programming pdf, ashok n kamthane c programming pdf, ashok n kamthane c programming pdf, ashok kamthane c programming pdf, ashok n kamthane c programming pdf, ashok kamthane c programming pdf.The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device having a gate insulating film composed of a nitride-based insulating film, and a method of manufacturing the same.
In recent years, in order to improve the reliability and reliability with a gate insulating film, a gate insulating film composed of a nitride-based insulating film has been employed as a gate insulating film for a MOS transistor or a MOSFET, and a fabrication method of a nitride-based insulating film has been improved. On the other hand, if a MOS transistor or a MOSFET using a gate insulating film composed of a nitride-based insulating film is employed in an LSI, a gate insulating film having a sufficient withstand voltage cannot be formed, so that reduction in the electrical field intensity applied to the gate insulating film is desired.
It is known that there is a correlation between the electrical field intensity applied to a gate insulating film and the field-induced drain leakage current. Therefore, a gate insulating film composed of a nitride-based insulating film is desired to have a decreased field-induced drain leakage current.
Japanese Unexamined Patent Application Publication No. 2003-104560 discloses a gate insulating film having a decreased field-induced drain leakage current. The gate insulating film disclosed in Japanese Unexamined Patent Application Publication No. 2003-104560 has a peak value of capacitance in the vicinity of the interface between an Si substrate and the gate insulating film, i.e., a maximum value of local electric field intensity applied to the gate insulating film.
Therefore, a gate insulating film having a decreased field-induced drain leakage current can be obtained in the case of the gate insulating film disclosed in Japanese Unexamined Patent Application Publication No. 2003-104560. However, in the manufacturing of

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